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D5V0L4B5S
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P PP
I PP
V ESD_Contact
V ESD_Air
Value
84
6
±30
±30
Unit
W
A
kV
kV
Conditions
8/20 μ s, Per Fig. 2
8/20 μ s, Per Fig. 2
Standard IEC 61000-4-2
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
P D
R θ JA
T J
T STG
Value
200
625
-65 to +150
-65 to +150
Unit
mW
° C/W
° C
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current (Note 6)
Clamping Voltage (Note 4)
Differential Resistance
Channel Input Capacitance
Symbol
V RWM
V BR
I R
V CL
R DIF
C T
Min
-
6
-
-
-
-
-
-
-
Typ
-
7
10
7.0
8.7
10.5
11.5
0.2
15
Max
5.0
8
100
9.0
10.7
12.0
14.0
-
20
Unit
V
V
nA
V
V
V
V
?
pF
Test Conditions
-
I R = 1.0mA
V RWM = 5V
I PP = 1A, t p = 8/20 μ S
I PP = 3A, t p = 8/20 μ S
I PP = 5A, t p = 8/20 μ S
I PP = 6A, t p = 8/20 μ S
I R = 1.0A, t p = 8/20 μ S
V IN = 0 V, f = 1MHz
(Channel to Pin 2)
Notes:
4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
100
100
75
50
50
25
0
0
25
50 75 100 125 150 175
T A , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
200
0
0
20 40
t, TIME ( μ s)
Fig. 2 Pulse Waveform
60
D5V0L4B5S
Document number: DS 35573 Rev. 5 - 2
2 of 5
www.diodes.com
January 2012
? Diodes Incorporated
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